Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz)

Calculation of the concentration of defects on the doping level for the average cluster in n-Si. It is shown that the concentration of defects for the average cluster is in inverse proportion to the square of the radius of the cluster model Gossick's.

Рубрика Физика и энергетика
Вид статья
Язык английский
Дата добавления 11.11.2013
Размер файла 200,4 K

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