Influence of stress-dependent surface generation of interstitials on stacking fault growth and dopant diffusion in silicon

Main calculation of activation volumes for interstitials and vacancie. Diffusion equations for point defects. Surface generation and recombination of point defects. Simulation of stacking fault growth. Simulation of stress-nediated dopant diffusion.

Рубрика Химия
Предмет Chemistry
Вид статья
Язык английский
Прислал(а) Аля
Дата добавления 29.04.2017
Размер файла 565,9 K

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