A model for minority carrier mobility in polysilicon emitters

Effect of the segregation of electrically active dopants. Diffusion theory of the hole current. Polysilicon emitter contacts and its dependence on dopant concentration. Hole mobility versus grain size for two values of the total dopant concentration.

Рубрика Химия
Предмет Chemistry
Вид статья
Язык английский
Прислал(а) Аля
Дата добавления 29.04.2017
Размер файла 54,2 K

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