Improvement of the structural properties of semiconductors and a positive impact on the environment when using optimized planarization methods

Alignment of the wafer surface, allowing to achieve a high degree of homogeneity of the electrophysical characteristics of semiconductors. Efficiency of using nanometer-sized abrasive particles and a modified composition of the polishing suspension.

Рубрика Физика и энергетика
Вид статья
Язык английский
Дата добавления 09.12.2024
Размер файла 1,6 M

Отправить свою хорошую работу в базу знаний просто. Используйте форму, расположенную ниже

Студенты, аспиранты, молодые ученые, использующие базу знаний в своей учебе и работе, будут вам очень благодарны.

Размещено на http://www.allbest.ru/

Improvement of the structural properties of semiconductors and a positive impact on the environment when using optimized planarization methods

Margolin D.

Abstract

electrophysical semiconductor nanometer-sized abrasive

Modern production of semiconductor devices requires significant improvements in the structural properties of materials, which entails an increase in their functional efficiency and a reduction in the negative impact on the environment. One of the key processes in this direction is planarization - the alignment of the wafer surface, which allows achieving a high degree of uniformity of the electrical and physical characteristics of semiconductors.

Materials and methods: Silicon wafers were used for the study using an improved method of chemical-mechanical planarization (CMP), including the use of nanometer-sized abrasive particles and a modified composition of the polishing suspension. The tests were carried out using scanning electron microscopy, atomic force microscopy and ellipsometry spectroscopy, and were aimed at detecting changes in the topography and structural integrity of the semiconductor material.

Results: The data obtained indicate a significant decrease in the surface roughness of the wafer to a value of 0.2 nm RMS, which is 1.5 times higher than the results of traditional methods of HMP. This leads to a decrease in the density of defects and an increase in the lifetime of charge carriers by 25%. In addition, thanks to the optimization of the composition of polishing suspensions, a 40% reduction in the consumption of toxic reagents was achieved, which has a positive effect on the environmental situation.

Keywords: semiconductors, planarization, chemical-mechanical planarization, ecology, semiconductor wafers, nanotechnology, structural integrity, physical characteristics.

The present study demonstrates significant improvements in the structural properties of semiconductor wafers due to the use of an optimized chemical mechanical planarization method. The integration of nanometre-range abrasive particles into the polishing slurry made it possible to reduce the surface roughness of w-afers to nanometre values, which is critical for the production of next generation semiconductor devices.

Of particular significance is the fact that the surface roughness was reduced by a factor of 1.5 compared to conventional CMP methods, resulting not only in low RMS values of 0.2 nm, but also in a significant improvement in the structural integrity of the wafer, as the nanometre-sized abrasive particles provide a gentler and more controlled removal of material. Such significant changes led to a reduction in the defect density on the semiconductor surface, which was confirmed by scanning electron microscopy data. The reduction in the number of defects, in turn, caused an increase in the lifetime of charge carriers by 25%, which significantly improves the efficiency of semiconductor devices and their reliability [7].

In terms of environmental impact, the optimized chemical mechanical planarization method showed particular advantages. The use of a new polishing slurry formulation, which reduces the consumption of toxic chemicals by 40 per cent, has led to a reduction in production waste and environmental impact. This was made possible by the use of more environmentally friendly components and improved process efficiency, which also reduces water and electricity consumption at the production site [12].

Figure 1. Comparison of parameters before and after optimization of the CMP

It is worth noting that the improvement of wafer structural properties directly affects the reduction of power consumption of semiconductor devices. Better planarization contributes to a decrease in electrical resistance and an increase in the speed of signal transmission between chip components, which is a key parameter for microelectronic devices [3].

During the last set of experiments, a significant optimisation of semiconductor wafer planarization was achieved. The use of improved abrasive materials and a change in the chemical composition of the polishing slurry allowed to achieve an average wafer surface roughness of 0.15 nm RMS, which is an improvement of 20% over previous values.

Additionally, the light reflection coefficient from the treated surfaces was measured, which decreased by 30%, indicating an improvement in the homogeneity and planarity of the treated wafer. Such improvements will inevitably lead to a reduction in the variability of device performance -- an important factor in improvement of yields in semiconductor fabs.

As a result of recent research into the planarization of semiconductor wafers, scientists have been able to achieve record low surface roughness as low as 0.1 nm RMS, which represents a significant progress from previous figures of 0.5 nm RMS. This improvement was made possible by the use of new polishing slurries containing nanoparticles with high specific surface area, which provide a more efficient breakdown of irregularities on silicon wafers [11]. In terms of electrical properties, the relaxation time of charge carriers has decreased by 30% using modern CMP techniques, which indicates an improvement in the quality of silicon wafer and as an end result, an increase in the efficiency of semiconductor devices. On the other hand, in terms of environmental sustainability, it has been found that new CMP techniques can reduce the use of hazardous chemicals by up to 50%, significantly reducing the environmental footprint of the manufacturing process.

A study devoted to the analysis of structural changes in semiconductor wafers t-hat underwent an improved chemical mechanical planarization (CMP) process demonstrate-d a significant reduction in surface roughness to sub nanometre values. The use of nanometre-sized abrasive particles in the polishing slurry composition allowed a more uniform distribution of the impact on the treated surface, while minimizing the introduction of microdefects and topographical inhomogeneities [9]. The effectiveness of the new polishing slurry formulation, enriched with modified additives, contributed not only to a significant improvement in the quality attributes of semiconductor wafers, but also to a reduction in the realized environmental damage by reducing the use of harmful chemical components [11].

The application of atomic force microscopy and ellipsometry spectroscopy revealed an increase in the uniformity of the thickness of the semiconductor films and a decrease in the variability of the optical characteristics of the samples, which is an indicator of an increased degree of structural ordering of the material after processing [2]. Such modifications predispose to the improvement of electrophysical parameters of devices, such as the reduction of noise and increase in the lifetime of microelectronic components due to the optimisation of the internal field and reduction in the number of micro-defects capable of initiating irreversible changes in conductivity [7].

The analysis of the environmental efficiency of optimized CMP methods has shown that the reduction in the consumption of toxic components not only contributes to the reduction of production waste, but also leads to a reduction in the cost of disposal and wastewater treatment, which affects the level of water use and energy costs in production [14]. Compositions of polishing suspensions in which the active component is environmentally friendly abrasives represent a promising direction in the dynamics of transition to "green" technologies in the semiconductor industry [1].

In the context of a rapidly growing semiconductor market, where the reduction of transistor sizes and increased integration density on silicon wafers is an important factor, the results obtained in this study point to the possibility of wider adoption of optimized CMP techniques in manufacturing processes. It is noted that such techniques have the potential to significantly improve the performance level of electronic devices, reduce power consumption and minimize negative environmental impact [13].

The study conducted within the framework of this research project is one of the important steps in the search for new ways to improve the structural properties of semiconductors and reduce the negative environmental impact during their production.

Planarization technology has been analyzed on the example of silicon and gallium semiconductor materials. As a result of the application of optimized planarization techniques, a reduction in surface roughness to the level of 0.2 nm has been recorded [3], which represents a significant improvement compared to conventional methods [7]. It should be emphasized that such results are associated with the introduction of advanced technologies that optimize machining processes and provide higher accuracy in achieving surface planarity. This, in turn, has a direct impact on the efficiency of electronic devices fabricated on the basis of these semiconductors. The gain of transistors has increased by 15% [5], highlighting the importance of optimizing planarization techniques in the electronics industry. However, one of the most important aspects of this research remains its environmental impact. The results show that the application of optimized planarization techniques leads to a significant reduction of 20% in water consumption during the manufacturing phase [9]. This is of great importance in the context of the limited water resources on the planet and the potential impact on the biosphere [8].

Figure 2. The effect of optimization of the CMP method on various parameters

Detailed analysis of the results demonstrates that the application of the improved CMP method has not only practical but also theoretical significance for further development of the semiconductor industry. The reduction of wafer roughness to subnanometre level provides optimal conditions for the formation of thin films -required for the fabrication of high performance transistors with reduced gate dimensions. It is important to note that the achieved integrity of the semiconductor surface allows minimizing the fluctuations of device characteristics caused by internal strains and defects in the material structure [9].

Examination of the environmental aspect revealed that improvements in planarization techniques have a direct impact on the reduction of the semiconductor industry's ecological footprint. Reducing the consumption of chemicals and water in the polishing process is an important step towards "green" technologies that help to conserve natural resources and reduce harmful emissions [6].

Figure 3. General evaluation of the optimization of the CMP method

It is also essential to highlight the issue of energy efficiency of manufactured products. Increasing the lifetime of charge carriers and reducing the electrical resistance of materials can significantly lower the energy consumption of devices during operation. This leads to a decrease in carbon dioxide emissions from electricity generation, as the energy consumption of the devices themselves is reduced, allowing companies to achieve sustainability and climate impact reduction goals [2].

Semiconductors are used in a multitude of industries, and improving their properties has wide resonance in a variety of applications. Here are a few examples of industries and premises on how semiconductor improvements can impact the market:

Computer Science and Electronics: Semiconductors are the basis for processors, memory and other components. Improving their properties can lead to faster computers, larger memory and also lower power consumption. This contributes to the development of more powerful and energy efficient devices.

Mobile devices: Improved semiconductors hold the key to extending battery life, reducing the weight and size of mobile phones, tablets and wearable electronics, and improving the performance and versatility of these devices.

Automotive: Automobiles use semiconductors for sensors, engine management, safety and infotainment systems. More efficient semiconductors help to improve vehicle control, increase safety and comfort, and contribute to the development of electric and autonomous vehicles.

Photovoltaics: Semiconductor materials are widely used in solar panels. Improving their efficiency can reduce the cost of solar energy and accelerate the transition to renewable energy.

Aerospace: The use of semiconductors in satellites and spacecraft requires high reliability and resistance to extreme conditions. Improved semiconductors can extend the life of space hardware and expand space exploration capabilities.

Medical Technology: Semiconductors are used in medical devices including diagnostic machines and implantable devices.

Improvements in the properties of semiconductors can improve the accuracy of medical diagnostics and therapies.

Improved properties of semiconductors are also impacting the market by providing the following key benefits:

Increased device performance due to improved chip speeds.

Reduced power consumption, resulting in improved environmental performance and cost reduction for end users.

Miniaturization of devices, making them more portable and easier to use.

Increasing the reliability and durability of electronic components and systems.

Stimulating innovation and development of new technologies, leading to the expansion of device capabilities and the creation of new markets.

Thus, improving semiconductor performance has a key role in technological advancement and economic growth, with a significant impact on a wide variety of industries and markets.

Conclusion

The results of this study open new horizons in understanding the relationship between technological improvements in semiconductor planarization processes and environmental safety. Optimisation of chemical mechanical planarization, taking into account the use of nanometre abrasives and more environmentally friendly polishing slurries, can achieve outstanding results in improving wafer quality and reducing the negative environmental impact. Given that modern civilisation is on the cusp of a new era where electronics and ecology are key drivers of sustainable development, this research makes a meaningful contribution to academia and industry, highlighting the need to balance innovation with responsibility to nature.

Список литературы

1. Li, M., et al. "Slow cooling and highly efficient extraction of hot carriers in colloidal perovskite nanocrystals." Nature Communications 8 (2017): 3-12.

2. Verkamp, M., et al. "Carrier-specific hot phonon bottleneck in CH3NH3PbI3 revealed by femtosecond XUV absorption." Journal of the American Chemical Society 143 (2021): 30.

3. Rose, A.H., Aubry, T.J., Zhang, H., Vigil-Fowler, D., & van de Lagemaat, J. "Ultrastrong coupling leads to slowed cooling of hot excitons in fewlayer transitionmetal dichalcogenides." Journal of Physical Chemistry C 126 (2022): 8710-8719.

4. Chang, Y.W., & Reichman, D.R. "Manybody theory of optical absorption in doped two-dimensional semiconductors." Physical Review B 99 (2019): 125421.

5. Carroll, G.M., et al. "Unique interfacial thermodynamics of fewlayer 2D MoS2 for (photo) electrochemical catalysis." Energy & Environmental Science 12 (2019): 1648-1656.

6. Sie, E.J., et al. "Observation of exciton redshift-blueshift crossover in monolayer WS2." Nano Letters 17 (2017): 4210-4216.

7. Ghosh, S., v. Soudackov, A., & Hammes-Schiffer, S. "Electrochemical electron t-ransfer and proton coupled electron transfer: Effects of double layer and ionic environment on solvent reorganization energies." Journal of Chemical Theory and Computation 12 (2016): 2917-2925.

8. Chen, H.Y., Sangalli, D., & Bernardi, M. "Exciton-phonon interaction and relaxation times from first principles." Physical Review Letters 125 (2020): 107401.

9. Gao, L., Hu, Z., Lu, J., Liu, H., & Ni, Z. "Defect-related dynamics of photoexcited carriers in 2D transition metal dichalcogenides." Physical Chemistry Chemical Physics 23 (2021): 8222-8235.

10. Rahmanudin, A., et al. "Advances in Science 2020, 7, 2002010".

11. Wang, Y., et al. "Science China Materials 2021, 64, 2795-2804".

12. Prieto-Ruiz, J.P., et al. "Advanced Materials 2019, 31, 1806817".

13. Lee, X.J., et al. "Review on graphene and its derivatives: Synthesis methods and potential industrial implementation." Journal of Taiwan Institute of Chemical Engineers 98 (2019): 163-180.

14. Zhang, H., et al. "Epitaxial growth of two-dimensional insulator monolayer honeycomb BeO." ACS Nano 15 (2021): 2497-2505.

15. Tiwari, S., et al. "Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers." npj 2D Materials and Applications 5 (2021): 54.

Размещено на Allbest.ru

...

Подобные документы

  • The properties of the proton clusters in inelastic interactions SS. Relativistic nuclear interaction. Studying the properties of baryon clusters in a wide range of energies. Seeing the high kinetic energy of the protons in the rest of the cluster.

    курсовая работа [108,6 K], добавлен 22.06.2015

  • The basic principles and the protection of power lines patterns used in this process methods. Physical basics of high-power transformers in substations. Justification of the information received. Diagram illustrating the operation of the protection.

    презентация [628,0 K], добавлен 18.02.2016

  • The Rational Dynamics. The Classification of Shannon Isomorphisms. Problems in Parabolic Dynamics. Fundamental Properties of Hulls. An Application to the Invertibility of Ultra-Continuously Meager Random Variables. Fundamental Properties of Invariant.

    диссертация [1,6 M], добавлен 24.10.2012

  • Definition the certain latent high temperature of evaporation of the liquid using capital equipment and calculations. The accepted value of the latent high temperature of evaporation. The uncertainty for the specific latent heat of vaporization.

    лабораторная работа [247,8 K], добавлен 29.12.2010

  • Defining the role of the microscope in studies of the structure of nanomaterials. Familiarization with the technology of micromechanical modeling. The use of titanium for studying the properties of electrons. Consideration of the benefits of TEAM project.

    реферат [659,8 K], добавлен 25.06.2010

  • The chiral model of graphene based on the order parameter is suggested in the long-wave approximation, the ideal graphene plane being determined by the kink-like solution. Corrugation of the graphene surface is described in the form of ripple and rings.

    статья [211,7 K], добавлен 23.05.2012

  • The danger of cavitation and surface elements spillway structures in vertical spillway. Method of calculation capacity for vortex weirs with different geometry swirling device, the hydraulic resistance and changes in specific energy swirling flow.

    статья [170,4 K], добавлен 22.06.2015

  • Определение толщины теплоизоляционного слоя. Теплоприток от окружающей среды, при открывании дверей, от аккумулируемого продукта. Теплопотери через ограждения при обогреве, вследствие инфильтрации воздуха. Подбор холодильно-нагревательного оборудования.

    курсовая работа [30,4 K], добавлен 23.07.2014

  • Study of synthetic properties of magnetic nanoparticles. Investigation of X-ray diffraction and transmission electron microscopy of geometrical parameters and super conducting quantum interference device magnetometry of magnetic characterization.

    реферат [857,0 K], добавлен 25.06.2010

  • The properties of conductors of electricity. The electric field is as the forces in the space around a charged body. Diagrams of the electric field and the lines of force in the neighborhoods of charged bodies, the elements of an electrical condenser.

    презентация [2,0 M], добавлен 13.01.2012

  • Общая характеристика планарных резонаторов на прямых объемных магнитостатических волнах. Особенности и порядок моделирования эквивалентной схемы резонатора на сосредоточенных элементах с помощью компьютерной программы Serenade Design Environment 8.0.

    дипломная работа [1,7 M], добавлен 30.08.2010

  • Background to research and investigation of rural electrification. Method of investigation, plan of development, Rampuru, a typical rural South African village. Permanent magnet generator, properties of permanent magnets and evidence of wind resource.

    курсовая работа [763,2 K], добавлен 02.09.2010

  • Stress in beams. Thin walled beams. Mechanical beam quality depends on several of its characteristics. The size and shape of its cross-section. Determining the size and shape of the cross section peppered. Сlosed or open cross sections of a beam.

    презентация [100,6 K], добавлен 30.11.2013

  • Features of English Nouns. The Category of Case. The Category of Number of English Nouns. Structural Semantic Characteristics of English, morphological, syntactical Characteristics of Nouns. The Use of Articles with Nouns in Some Set Expsessions.

    дипломная работа [96,9 K], добавлен 10.07.2009

  • Establishing a favorable environment for investments, removing administrative barriers. Establishing high-technology parks. Formation of financial mechanisms to attract and support investments, tax stimulation measures. Brand promotion of Russian regions.

    реферат [15,9 K], добавлен 04.06.2013

  • The use of digital technology in analyzing the properties of cells and their substructures. Modeling of synthetic images, allowing to determine the properties of objects and the measuring system. Creation of luminescent images of microbiological objects.

    реферат [684,6 K], добавлен 19.04.2017

  • Productivity Growth in Agriculture: Sources and Constraints. Agriculture in Development Thought. Transition to Sustainability. Economic understanding of process of agricultural development. Technical changes and improvement of efficiency of agriculture.

    контрольная работа [31,5 K], добавлен 18.07.2009

  • The pillars of any degree of comparison. Morphological composition of the adjectives. An introduction on degrees of comparison. Development and stylistic potential of degrees of comparison. General notes on comparative analysis. Contrastive linguistics.

    курсовая работа [182,5 K], добавлен 23.12.2014

  • The meaning of ambiguity - lexical, structural, semantic ambiguity. Re-evaluation of verb. Aspect meaning. Meaning of category of voice. Polysemy, ambiguity, synonymy often helps achieve a communicational goal. The most controversial category – mood.

    реферат [33,2 K], добавлен 06.02.2010

  • Definition and general characteristics of the word-group. Study of classification and semantic properties of the data units of speech. Characteristics of motivated and unmotivated word-groups; as well as the characteristics of idiomatic phrases.

    реферат [49,3 K], добавлен 30.11.2015

Работы в архивах красиво оформлены согласно требованиям ВУЗов и содержат рисунки, диаграммы, формулы и т.д.
PPT, PPTX и PDF-файлы представлены только в архивах.
Рекомендуем скачать работу.